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18-mbit (512k x 36/1m x 18) pipelined sram with nobl? architecture cy7c1370d cy7c1372d cypress semiconductor corporation ? 198 champion court ? san jose , ca 95134-1709 ? 408-943-2600 document #: 38-05555 rev. *f revised june 28, 2006 features ? pin-compatible and functionally equivalent to zbt? ? supports 250-mhz bus operations with zero wait states ? available speed grades are 250, 200 and 167 mhz ? internally self-time d output buffer cont rol to eliminate the need to use asynchronous oe ? fully registered (inputs and outputs) for pipelined operation ? byte write capability ? 3.3v core power supply (v dd ) ? 3.3v/2.5v i/o power supply(v ddq ) ? fast clock-to-output times ? 2.6 ns (for 250-mhz device) ? clock enable (cen ) pin to suspend operation ? synchronous self-timed writes ? available in jedec-standard lead-free 100-pin tqfp, lead-free and non-lead-free 119-ball bga and 165-ball fbga package ? ieee 1149.1 jtag-compatible boundary scan ? burst capability?linear or interleaved burst order ? ?zz? sleep mode option and stop clock option functional description the cy7c1370d and cy7c1372d are 3.3v, 512k x 36 and 1m x 18 synchronous pipelined burst srams with no bus latency? (nobl ?) logic, respectively. they are designed to support unlimited true back-to-back read/write operations with no wait states. the cy7c1370d and cy7c1372d are equipped with the advanced (nobl) logic required to enable consecutive read/write operations with data being trans- ferred on every clock cycle. this feature dramatically improves the throughput of data in systems that require frequent write/read transitions. the cy7c1370d and cy7c1372d are pin compatible and functionally equivalent to zbt devices. all synchronous inputs pass through input registers controlled by the rising edge of the clock. all data outputs pass through output registers controlled by t he rising edge of the clock. the clock input is qualified by the clock enable (cen ) signal, which when deasserted suspends operation and extends the previous clock cycle. write operations are controlled by the byte write selects (bw a ?bw d for cy7c1370d and bw a ?bw b for cy7c1372d) and a write enable (we ) input. all writes are conducted with on-chip synchronous self-timed write circuitry. three synchronous chip enables (ce 1 , ce 2 , ce 3 ) and an asynchronous output enable (oe ) provide for easy bank selection and output tri-state control. in order to avoid bus contention, the output driver s are synchronously tri-stated during the data portion of a write sequence. a0, a1, a c mode bw a bw b we ce1 ce2 ce3 oe read logic dqs dqp a dqp b dqp c dqp d d a t a s t e e r i n g o u t p u t b u f f e r s memory array e e input register 0 address register 0 write address register 1 write address register 2 write registry and data coherency control logic burst logic a0' a1' d1 d0 q1 q0 a0 a1 c adv/ld adv/ld e input register 1 s e n s e a m p s e clk c en write drivers bw c bw d zz sleep control o u t p u t r e g i s t e r s logic block diagram-cy7c1370d (512k x 36) [+] feedback
cy7c1370d cy7c1372d document #: 38-05555 rev. *f page 2 of 28 selection guide 250 mhz 200 mhz 167 mhz unit maximum access time 2.6 3.0 3.4 ns maximum operating current 350 300 275 ma maximum cmos standby current 70 70 70 ma a0, a1, a c mode bw a bw b we ce1 ce2 ce3 oe read logic dqs dqp a dqp b d a t a s t e e r i n g o u t p u t b u f f e r s memory array e e input register 0 address register 0 write address register 1 write address register 2 write registry and data coherency control logic burst logic a0' a1' d1 d0 q1 q0 a0 a1 c adv/ld adv/ld e input register 1 s e n s e a m p s o u t p u t r e g i s t e r s e clk c en write drivers zz sleep control logic block diagram-cy7c1372d (1m x 18) [+] feedback
cy7c1370d cy7c1372d document #: 38-05555 rev. *f page 3 of 28 pin configurations a a a a a 1 a 0 v ss v dd a a a a a a v ddq v ss dqb dqb dqb v ss v ddq dqb dqb v ss nc v dd dqa dqa v ddq v ss dqa dqa v ss v ddq v ddq v ss dqc dqc v ss v ddq dqc v dd v ss dqd dqd v ddq v ss dqd dqd dqd v ss v ddq a a ce 1 ce 2 bw a ce 3 v dd v ss clk we cen oe a a 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 a a adv/ld zz cy7c1370d 100-pin tqfp pinout a a a a a 1 a 0 v ss v dd a a a a a a a nc nc v ddq v ss nc dqp a dqa dqa v ss v ddq dqa dqa v ss nc v dd dqa dqa v ddq v ss dqa dqa nc nc v ss v ddq nc nc nc nc nc nc v ddq v ss nc nc dqb dqb v ss v ddq dqb dqb v dd v ss dqb dqb v ddq v ss dqb dqb dqpb nc v ss v ddq nc nc nc a a ce 1 ce 2 nc nc bw b bw a ce 3 v dd v ss clk we cen oe a a 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 a a adv/ld zz mode cy7c1372d bw d mode bw c dqc dqc dqc dqc dqpc dqd dqd dqd dqpb dqb dqa dqa dqa dqa dqpa dqb dqb (512k 36) (1m 18) bw b nc nc nc dqc nc nc(288) nc(144) nc(72) nc(36) nc(288) nc(144) nc(72) nc(36) dqpd a a [+] feedback
cy7c1370d cy7c1372d document #: 38-05555 rev. *f page 4 of 28 pin configurations (continued) 234567 1 a b c d e f g h j k l m n p r t u dq a v ddq nc/576m nc/1g dq c dq d dq c dq d aa aa av ddq ce 2 a v ddq v ddq v ddq v ddq nc/144m nc a dq c dq c dq d dq d tms v dd a nc/72m dqp d a a adv/ld ace 3 nc v dd aanc v ss v ss nc dqp b dq b dq b dq a dq b dq b dq a dq a nc tdi tdo v ddq tck v ss v ss v ss nc v ss v ss v ss v ss mode ce 1 v ss oe v ss v ddq bw c a v ss we v ddq v dd nc v dd v ss clk nc bw a cen v ss v ddq v ss zz nc/288m a a a1 a0 v ss v dd nc cy7c1370d (512k x 36) dqp c dq b a nc/36m dq c dq b dq c dq c dq c dq b dq b dq a dq a dq a dq a dqp a dq d dq d dq d dq d bw d 119-ball bga pinout bw b 234567 1 a b c d e f g h j k l m n p r t u nc/36m dq a v ddq nc/576m nc/1g nc dq b dq b dq b dq b aa aa av ddq ce 2 a nc v ddq nc v ddq v ddq v ddq nc nc nc/144m nc/72m a dq b dq b dq b dq b nc nc nc nc tms v dd a a dqp b a a adv/ld a ce 3 nc v dd aanc v ss v ss nc nc dqp a dq a dq a dq a dq a dq a dq a dq a nc tdi tdo v ddq tck v ss v ss v ss nc v ss nc v ss v ss v ss mode ce 1 v ss nc oe v ss v ddq bw b ancnc v ss we nc v ddq v dd nc v dd nc v ss clk nc nc bw a cen v ss nc v ddq v ss nc zz nc/288m a a a a1 a0 v ss nc v dd nc cy7c1372d (1m x 18) [+] feedback
cy7c1370d cy7c1372d document #: 38-05555 rev. *f page 5 of 28 pin configurations (continued) 234 567 1 a b c d e f g h j k l m n p r tdo nc/576m nc/1g dqp c dq c dqp d nc dq d a ce 1 bw b ce 3 bw c cen a ce2 dq c dq d dq d mode nc dq c dq c dq d dq d dq d nc/36m nc/72m v ddq bw d bw a clk we v ss v ss v ss v ss v ddq v ss v dd v ss v ss v ss nc v ss v ss v ss v ss v ddq v ddq nc v ddq v ddq v ddq v ddq a a v dd v ss v dd v ss v ss v ddq v dd v ss v dd v ss v dd v ss v ss v ss v dd v dd v ss v dd v ss v ss nc tck a0 v ss tdi a a dq c v ss dq c v ss dq c dq c nc v ss v ss v ss v ss nc v ss a1 dq d dq d nc/144m nc v ddq v ss tms 891011 nc/288m a a adv/ld nc oe a a nc v ss v ddq nc dqp b v ddq v dd dq b dq b dq b nc dq b nc dq a dq a v dd v ddq v dd v ddq dq b v dd nc v dd dq a v dd v ddq dq a v ddq v dd v dd v ddq v dd v ddq dq a v ddq a a v ss a a a dq b dq b dq b zz dq a dq a dqp a dq a a v ddq a 234 567 1 a b c d e f g h j k l m n p r tdo nc/576m nc/1g nc nc dqp b nc dq b a ce 1 nc ce 3 bw b cen a ce2 nc dq b dq b mode nc dq b dq b nc nc nc nc/36m nc/72m v ddq nc bw a clk we v ss v ss v ss v ss v ddq v ss v dd v ss v ss v ss nc v ss v ss v ss v ss v ddq v ddq nc v ddq v ddq v ddq v ddq a a v dd v ss v dd v ss v ss v ddq v dd v ss v dd v ss v dd v ss v ss v ss v dd v dd v ss v dd v ss v ss nc tck a0 v ss tdi a a dq b v ss nc v ss dq b nc nc v ss v ss v ss v ss nc v ss a1 dq b nc nc/144m nc v ddq v ss tms 891011 nc/288m a a adv/ld a oe a a nc v ss v ddq nc dqp a v ddq v dd nc dq a dq a nc nc nc dq a nc v dd v ddq v dd v ddq dq a v dd nc v dd nc v dd v ddq dq a v ddq v dd v dd v ddq v dd v ddq nc v ddq a a v ss a a a dq a nc nc zz dq a nc nc dq a a v ddq a cy7c1372d (1m x 18) cy7c1370d (512k x 36) 165-ball fbga pinout [+] feedback
cy7c1370d cy7c1372d document #: 38-05555 rev. *f page 6 of 28 pin definitions pin name i/o type pin description a0 a1 a input- synchronous address inputs used to select one of the address locations . sampled at the rising edge of the clk. bw a bw b bw c bw d input- synchronous byte write select inputs, active low . qualified with we to conduct writes to the sram. sampled on the rising edge of clk. bw a controls dq a and dqp a , bw b controls dq b and dqp b , bw c controls dq c and dqp c , bw d controls dq d and dqp d . we input- synchronous write enable input, active low . sampled on the rising edge of clk if cen is active low. this signal must be asserted low to initiate a write sequence. adv/ld input- synchronous advance/load input used to advance the on-chip address counter or load a new address . when high (and cen is asserted low) the internal burs t counter is advanc ed. when low, a new address can be loaded into the device fo r an access. after being deselected, adv/ld should be driven low in order to load a new address. clk input- clock clock input . used to capture all synchronous inputs to the device. clk is qualified with cen . clk is only recognized if cen is active low. ce 1 input- synchronous chip enable 1 input, active low . sampled on the rising edge of clk. used in conjunction with ce 2 and ce 3 to select/desel ect the device. ce 2 input- synchronous chip enable 2 input, active high . sampled on the rising edge of clk. used in conjunction with ce 1 and ce 3 to select/deselect the device. ce 3 input- synchronous chip enable 3 input, active low . sampled on the rising edge of clk. used in conjunction with ce 1 and ce 2 to select/desel ect the device. oe input- asynchronous output enable, active low . combined with the synchronous logic block inside the device to control the direction of the i/o pins. when low, the i/o pins are allowed to behave as outputs. when deasserted high, i/o pins are tri-stated, and act as input data pins. oe is masked during the data portion of a write sequence, during the first clock when emerging from a deselected state and when the device has been deselected. cen input- synchronous clock enable input, active low . when asserted low the clock signal is recognized by the sram. when deasserted high the clock signal is masked. since deasserting cen does not deselect the device, cen can be used to extend the previous cycle when required. dq s i/o- synchronous bidirectional data i/o lines . as inputs, they feed into an on-chip data register that is triggered by the rising edge of clk. as outputs, they deliver the data contained in the memory location specified by a [17:0] during the previous clock ri se of the read cycle. the direction of the pins is controlled by oe and the internal control logic. when oe is asserted low, the pins can behave as outputs. when high, dq a ?dq d are placed in a tri-state condition. the outputs are automat- ically tri-stated during the data portion of a writ e sequence, during the first clock when emerging from a deselected state, and when the device is deselected, regardless of the state of oe . dqp x i/o- synchronous bidirectional data parity i/o lines . functionally, these signals are identical to dq s . during write sequences, dqp a is controlled by bw a , dqp b is controlled by bw b , dqp c is controlled by bw c , and dqp d is controlled by bw d . mode input strap pin mode input . selects the burst order of the device. tied high selects the interleaved burst order. pulled low selects the linear burst order. mo de should not change states during operation. when left floating mode will default high, to an interleaved burst order. tdo jtag serial output synchronous serial data-out to the jtag circuit . delivers data on the negative edge of tck. tdi jtag serial input synchronous serial data-in to the jtag circuit . sampled on the rising edge of tck. tms test mode select synchronous this pin controls the test access port state machine . sampled on the rising edge of tck. tck jtag-clock clock input to the jtag circuitry . v dd power supply power supply inputs to the core of the device . [+] feedback
cy7c1370d cy7c1372d document #: 38-05555 rev. *f page 7 of 28 introduction functional overview the cy7c1370d and cy7c1372d are synchronous-pipelined burst nobl srams designed specifically to eliminate wait states during write/read transi tions. all synchronous inputs pass through input registers controlled by the rising edge of the clock. the clock signal is qualified with the clock enable input signal (cen ). if cen is high, the clock signal is not recognized and all internal states are maintained. all synchronous operations are qualified with cen . all data outputs pass through output registers controlled by the rising edge of the clock. maximum access delay from the clock rise (t co ) is 2.6 ns (250-mhz device). accesses can be initiated by asserting all three chip enables (ce 1 , ce 2 , ce 3 ) active at the rising edge of the clock. if clock enable (cen ) is active low and adv/ld is asserted low, the address presented to the device will be latched. the access can either be a read or write operation, depending on the status of the write enable (we ). bw x can be used to conduct byte write operations. write operations are qualified by the write enable (we ). all writes are simplified with on-chip synchronous self-timed write circuitry. three synchronous chip enables (ce 1 , ce 2 , ce 3 ) and an asynchronous output enable (oe ) simplify depth expansion. all operations (reads, writes, and deselects) are pipelined. adv/ld should be driven low once the device has been deselected in order to load a new address for the next operation. single read accesses a read access is initiated when the following conditions are satisfied at clo ck rise: (1) cen is asserted low, (2) ce 1 , ce 2 , and ce 3 are all asserted active, (3) the write enable input signal we is deasserted high, and (4) adv/ld is asserted low. the address presented to the address inputs is latched into the address register and presented to the memory core and control logic. the control logic determines that a read access is in progress and allows the requested data to propagate to the input of the ou tput register. at the rising edge of the next clock the requested data is allowed to propagate through the output register and onto the data bus within 2.6 ns (250-mhz device) provided oe is active low. after the first clock of the read access the output buffers are controlled by oe and the internal control logic. oe must be driven low in order for the device to drive out the requested data. during the second clock, a subsequent oper ation (read/write/deselect) can be initiated. deselecting the device is also pipelined. therefore, when the sram is deselected at clock rise by one of the chip enable signals, its output will tri-state following the next clock rise. burst read accesses the cy7c1370d and cy7c1372d have an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four reads without reasserting the address inputs. adv/ld must be driven low in order to load a new address into the sram, as described in the single read access section above. the sequ ence of the burst counter is determined by the mode input signal. a low input on mode selects a linear burst mode, a high selects an interleaved burst sequence. both burst counters use a0 and a1 in the burst sequence, and will wrap-around when incremented suffi- ciently. a high input on adv/ld will increment the internal burst counter regardless of the state of chip enables inputs or we . we is latched at the beginning of a burst cycle. therefore, the type of access (read or write) is maintained throughout the burst sequence. single write accesses write access are initiated w hen the following conditions are satisfied at clock rise: (1) cen is asserted low, (2) ce 1 , ce 2 , and ce 3 are all asserted active, and (3) the write signal we is asserted low. the address presented is loaded into the address register. the write signals are latched into the control logic block. on the subsequent clock rise the data lines are automatically tri-stated regardless of the state of the oe input signal. this allows the external logic to present the data on dq and dqp (dq a,b,c,d /dqp a,b,c,d for cy7c1370d and dq a,b /dqp a,b for cy7c1372d). in addition, the address for the subsequent access (read/write/deselect) is latched into the address register (provided the appr opriate control signals are asserted). on the next clock rise the data presented to dq and dqp (dq a,b,c,d /dqp a,b,c,d for cy7c1370d & dq a,b /dqp a,b for cy7c1372d) (or a subset for byte write operations, see write cycle description table for details) inputs is latched into the device and the write is complete. the data written during the writ e operation is controlled by bw (bw a,b,c,d for cy7c1370d and bw a,b for cy7c1372d) signals. the cy7c1370d/cy7c1372d provides byte write capability that is described in the write cycle description table. v ddq i/o power supply power supply for the i/o circuitry . v ss ground ground for the device . should be connected to ground of the system. nc ? no connects . this pin is not connected to the die. nc/(36m,72m, 144m, 288m, 576m, 1g) ? these pins are not connected . they will be used for expansio n to the 36m, 72m, 144m, 288m, 576m and 1g densities. zz input- asynchronous zz ?sleep? input . this active high input places the device in a non-time critical ?sleep? condition with data integrity preserved. during normal operation, this pin can be connected to v ss or left floating. zz pin has an internal pull-down. pin definitions (continued) pin name i/o type pin description [+] feedback
cy7c1370d cy7c1372d document #: 38-05555 rev. *f page 8 of 28 asserting the write enable input (we ) with the selected byte write select (bw ) input will selectively write to only the desired bytes. bytes not selected during a byte write operation will remain unaltered. a synchronous self-timed write mechanism has been provided to simplify the write operations. byte write capability has been included in order to greatly simplify read/modify/write sequences, which can be reduced to simple byte write operations. because the cy7c1370d and cy7c1372d are common i/o devices, data should not be driv en into the device while the outputs are active. the output enable (oe ) can be deasserted high before presenting data to the dq and dqp (dq a,b,c,d /dqp a,b,c,d for cy7c1370d and dq a,b /dqp a,b for cy7c1372d) inputs. doing so will tri-state the output drivers. as a safety precaution, dq and dqp (dq a,b,c,d /dqp a,b,c,d for cy7c1370d and dq a,b /dqp a,b for cy7c1372d) are automatically tri-stated during the data portion of a write cycle, regardless of the state of oe . burst write accesses the cy7c1370d/cy7c1372d has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four write oper ations without reasserting the address inputs. adv/ld must be driven low in order to load the initial address, as described in the single write access section above. when adv/ld is driven high on the subse- quent clock rise, the chip enables (ce 1 , ce 2 , and ce 3 ) and we inputs are ignored and the burst counter is incremented. the correct bw (bw a,b,c,d for cy7c1370d and bw a,b for cy7c1372d) inputs must be dr iven in each cycle of the burst write in order to write t he correct bytes of data. sleep mode the zz input pin is an asynchronous input. asserting zz places the sram in a power conservation ?sleep? mode. two clock cycles are required to enter into or exit from this ?sleep? mode. while in this mode, data integrity is guaranteed. accesses pending when entering the ?sleep? mode are not considered valid nor is the completion of the operation guaranteed. the device must be deselected prior to entering the ?sleep? mode. ce 1 , ce 2 , and ce 3 , must remain inactive for the duration of t zzrec after the zz input returns low. interleaved burst address table (mode = floating or v dd ) first address second address third address fourth address a1,a0 a1,a0 a1,a0 a1,a0 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00 linear burst address table (mode = gnd) first address second address third address fourth address a1,a0 a1,a0 a1,a0 a1,a0 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10 zz mode electrical characteristics parameter description test conditions min. max. unit i ddzz sleep mode standby current zz > v dd ? 0.2v 80 ma t zzs device operation to zz zz > v dd ? 0.2v 2t cyc ns t zzrec zz recovery time zz < 0.2v 2t cyc ns t zzi zz active to sleep current t his parameter is sampled 2t cyc ns t rzzi zz inactive to exit sleep curre nt this parameter is sampled 0 ns [+] feedback
cy7c1370d cy7c1372d document #: 38-05555 rev. *f page 9 of 28 notes: 1. x = ?don't care?, h = logic high, l = logic low, ce stands for all chip enables active. bw x = l signifies at least one byte write select is active, bw x = valid signifies that the desired byte write selects are as serted, see write cycle description table for details. 2. write is defined by we and bw x . see write cycle description table for details. 3. when a write cycle is detected, all i/os are tri-stated, even during byte writes. 4. the dq and dqp pins are controlled by the current cycle and the oe signal. 5. cen = h inserts wait states. 6. device will power-up deselected and the i/os in a tri-state condition, regardless of oe . 7. oe is asynchronous and is not sampled with the clock rise. it is masked internally during write cycles.during a read cycle dq s and dqp x = three-state when oe is inactive or when the device is deselected, and dq s = data when oe is active. truth table [1, 2, 3, 4, 5, 6, 7] operation address used ce zz adv/ld we bw x oe cen clk dq deselect cycle none h l l x x x l l-h tri-state continue deselect cycle none x l h x x x l l-h tri-state read cycle (begin burst) exte rnal l l l h x l l l-h data out (q) read cycle (continue burst) next x l h x x l l l-h data out (q) nop/dummy read (begin burst) external l l l h x h l l-h tri-state dummy read (continue burst) next x l h x x h l l-h tri-state write cycle (begin burst) external l l l l l x l l-h data in (d) write cycle (continue burst) next x l h x l x l l-h data in (d) nop/write abort (begin burst) none l l l l h x l l-h tri-state write abort (continue burst) next x l h x h x l l-h tri-state ignore clock edge (stall) current x l x x x x h l-h ? sleep mode none x h x x x x x x tri-state [+] feedback
cy7c1370d cy7c1372d document #: 38-05555 rev. *f page 10 of 28 partial write cycle description [1, 2, 3, 8] function (cy7c1370d) we bw d bw c bw b bw a read h x x x x write ? no bytes written l h h h h write byte a ? (dq a and dqp a ) lhhhl write byte b ? (dq b and dqp b )lhhlh write bytes b, a l h h l l write byte c ? (dq c and dqp c )lhlhh write bytes c, a l h l h l write bytes c, b l h l l h write bytes c, b, a l h l l l write byte d ? (dq d and dqp d )llhhh write bytes d, a l l h h l write bytes d, b llhlh write bytes d, b, a l l h l l write bytes d, c l l l h h write bytes d, c, a l l l h l write bytes d, c, b l l l l h write all bytes l l l l l function (cy7c1372d) we bw b bw a read hx x write ? no bytes written l h h write byte a ? (dq a and dqp a )lhl write byte b ? (dq b and dqp b )llh write both bytes l l l note: 8. table only lists a partial listing of the by te write combinations. any combination of bw x is valid appropriate write will be done based on which byte write is active. [+] feedback
cy7c1370d cy7c1372d document #: 38-05555 rev. *f page 11 of 28 ieee 1149.1 serial boundary scan (jtag) the cy7c1370d/cy7c1372d incorporates a serial boundary scan test access port (tap). this part is fully compliant with 1149.1. the tap operates using jedec-standard 3.3v or 2.5v i/o logic levels. the cy7c1370d/cy7c1372d contains a tap controller, instruction register, boundary sc an register, bypass register, and id register. disabling the jtag feature it is possible to operate the sram without using the jtag feature. to disable the tap controller, tck must be tied low (v ss ) to prevent clocking of the device. tdi and tms are inter- nally pulled up and may be unconnected. they may alternately be connected to v dd through a pull-up resistor. tdo should be left unconnected. upon power-up, the device will come up in a reset state which will not interfere with the operation of the device. tap controller state diagram the 0/1 next to each state repr esents the value of tms at the rising edge of tck. test access port (tap) test clock (tck) the test clock is used only with the tap controller. all inputs are captured on the rising edge of tck. all outputs are driven from the falling edge of tck. test mode select (tms) the tms input is used to give commands to the tap controller and is sampled on the rising edge of tck. it is allowable to leave this ball unconnected if the tap is not used. the ball is pulled up internally, resulting in a logic high level. test data-in (tdi) the tdi ball is used to serially input information into the registers and can be connected to the input of any of the registers. the register between tdi and tdo is chosen by the instruction that is loaded into the tap instruction register. tdi is internally pulled up and can be unconnected if the tap is unused in an application. tdi is connected to the most signif- icant bit (msb) of any regist er. (see tap controller block diagram.) test data-out (tdo) the tdo output ball is used to serially clock data-out from the registers. the output is active depending upon the current state of the tap state machine. the output changes on the falling edge of tck. tdo is connected to the least significant bit (lsb) of any register. (see tap controller state diagram.) tap controller block diagram performing a tap reset a reset is performed by forcing tms high (v dd ) for five rising edges of tck. this reset does not affect the operation of the sram and may be performed while the sram is operating. at power-up, the tap is reset internally to ensure that tdo comes up in a high-z state. tap registers registers are connected between the tdi and tdo balls and allow data to be scanned into and out of the sram test circuitry. only one register can be selected at a time through the instruction register. data is serially loaded into the tdi ball on the rising edge of tck. data is output on the tdo ball on the falling edge of tck. instruction register three-bit instructions can be seri ally loaded into the instruction register. this register is loaded when it is placed between the tdi and tdo balls as shown in the tap controller block diagram. upon power-up, the instruction register is loaded with the idcode instruction. it is also loaded with the idcode instruction if the controller is placed in a reset state as described in the previous section. test-logic reset run-test/ idle select dr-scan select ir-scan capture-dr shift-dr capture-ir shift-ir exit1-dr pause-dr exit1-ir pause-ir exit2-dr update-dr exit2-ir update-ir 1 1 1 0 1 1 0 0 1 1 1 0 0 0 0 0 0 0 0 0 1 0 1 1 0 1 0 1 1 1 1 0 bypass register 0 instruction register 0 1 2 identification register 0 1 2 29 30 31 . . . boundary scan register 0 1 2 . . x . . . s election circuitr y selection circuitry tck t ms tap controller tdi td o [+] feedback
cy7c1370d cy7c1372d document #: 38-05555 rev. *f page 12 of 28 when the tap controller is in the capture-ir state, the two least significant bits are loaded with a binary ?01? pattern to allow for fault isolation of the board-level serial test data path. bypass register to save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. the bypass register is a single-bit register that can be placed between the tdi and tdo balls. this allows data to be shifted through the sram with minimal delay. the bypass register is set low (v ss ) when the bypass instruction is executed. boundary scan register the boundary scan register is connected to all the input and bidirectional balls on the sram. the boundary scan register is lo aded with the contents of the ram i/o ring when the tap controller is in the capture-dr state and is then placed between the tdi and tdo balls when the controller is moved to the shift-dr state. the extest, sample/preload and sample z instructions can be used to capture the contents of the i/o ring. the boundary scan order tables show the order in which the bits are connected. each bit corresponds to one of the bumps on the sram package. the msb of the register is connected to tdi and the lsb is connected to tdo. identification (id) register the id register is loaded with a vendor-specific, 32-bit code during the capture-dr state when the idcode command is loaded in the instruction regi ster. the idcode is hardwired into the sram and can be shifted out when the tap controller is in the shift-dr state. the id register has a vendor code and other information described in the identification register definitions table. tap instruction set overview eight different instructions are possible with the three bit instruction register. all combinations are listed in the instruction codes table. three of these instructions are listed as reserved and should not be used. the other five instruc- tions are described in detail below. instructions are loaded into the tap controller during the shift-ir state when the instruction register is placed between tdi and tdo. during this state, instructions are shifted through the instruction register through the tdi and tdo balls. to execute the instruction once it is shifted in, the tap controller needs to be moved into the update-ir state. extest the extest instruction enables the preloaded data to be driven out through the system output pins. this instruction also selects the boundary scan register to be connected for serial access between the tdi and tdo in the shift-dr controller state. idcode the idcode instruction causes a vendor-specific, 32-bit code to be loaded into the instruction register. it also places the instruction register between the tdi and tdo balls and allows the idcode to be shifted out of the device when the tap controller enters the shift-dr state. the idcode instruction is loaded into the instruction register upon power-up or whenever the tap controller is given a test logic reset state. sample z the sample z instruction causes the boundary scan register to be connected between the tdi and tdo balls when the tap controller is in a shift-dr state. it also places all sram outputs into a high-z state. sample/preload sample/preload is a 1149.1-mandatory instruction. when the sample/preload instructions are loaded into the in- struction register and the tap c ontroller is in the capture-dr state, a snapshot of data on th e inputs and output pins is cap- tured in the boundary scan register. the user must be aware that th e tap controller clock can only operate at a frequency up to 20 mhz, while the sram clock operates more than an order of magnitude faster. because there is a large difference in the clock frequencies, it is possi- ble that during the capture-dr state, an input or output will undergo a transition. the tap ma y then try to capture a signal while in transition (metastable state). this will not harm the device, but there is no guarantee as to the value that will be captured. repeatable results may not be possible. to guarantee that the boundary scan register will capture the correct value of a signal, the sram signal must be stabilized long enough to meet the tap controller's capture set-up plus hold times (t cs and t ch ). the sram clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a sample/p reload instruction. if this is an issue, it is still possible to capture all other signals and simply ignore the value of the ck and ck captured in the boundary scan register. once the data is captured, it is possible to shift out the data by putting the tap into the shift-dr state. this places the bound- ary scan register between the tdi and tdo pins. preload allows an initial data pattern to be placed at the latched parallel outputs of the boundary scan register cells pri- or to the selection of another boundary scan test operation. the shifting of data for the sample and preload phases can occur concurrently when required?that is, while data captured is shifted out, the pr eloaded data can be shifted in. bypass when the bypass instruction is loaded in t he instruction register and the tap is placed in a shift-dr state, the bypass register is placed between the tdi and tdo balls. the advantage of the bypass instructio n is that it shortens the boundary scan path when multiple devices are connected together on a board. extest output bus tri-state ieee standard 1149.1 mandates that t he tap controller be able to put the output bus into a tri-state mode. the boundary scan register has a special bit located at bit #85 (for 119-bga package) or bit #89 (for 165-fbga package). when this scan cell, called the ?extest output bus tri-state,? is latched into the preload register during the ?update-dr? state [+] feedback
cy7c1370d cy7c1372d document #: 38-05555 rev. *f page 13 of 28 in the tap controller, it will directly control the state of the output (q-bus) pins, when t he extest is entered as the current instruction. when high, it will enable the output buffers to drive the output bus. when low, this bit will place the output bus into a high-z condition. this bit can be set by entering the sample/preload or extest command, and then shifting the desired bit into that cell, during the ?shift-dr? stat e. during ?update-dr,? the value loaded into that shift-register cell will latch into the preload register. when the extest instru ction is entered, this bit will directly control the output q-bu s pins. note that this bit is preset high to enable the output when the device is powered-up, and also when the tap controller is in the ?test-logic-reset? state. reserved these instructions are not im plemented but are reserved for future use. do not use these instructions. tap timing tap ac switching characteristics over the operating range [9, 10] parameter description min. max. unit clock t tcyc tck clock cycle time 50 ns t tf tck clock frequency 20 mhz t th tck clock high time 20 ns t tl tck clock low time 20 ns output times t tdov tck clock low to tdo valid 10 ns t tdox tck clock low to tdo invalid 0 ns set-up times t tmss tms set-up to tck clock rise 5 ns t tdis tdi set-up to tck clock rise 5 ns t cs capture set-up to tck rise 5 ns hold times t tmsh tms hold after tck clock rise 5 ns t tdih tdi hold after clock rise 5 ns t ch capture hold after clock rise 5 ns notes: 9. t cs and t ch refer to the set-up and hold time requirements of latching data from the boundary scan register. 10. test conditions are specified using t he load in tap ac test conditions. t r /t f = 1 ns. t tl test clock (tck) 123456 t est mode select (tms) t th test data-out (tdo) t cyc test data-in (tdi) t tmsh t tmss t tdih t tdis t tdox t tdov don?t care undefined [+] feedback
cy7c1370d cy7c1372d document #: 38-05555 rev. *f page 14 of 28 3.3v tap ac test conditions input pulse levels ................................................ v ss to 3.3v input rise and fall times ......... .......................................... 1 ns input timing referenc e levels ...........................................1.5v output reference levels...................................................1.5v test load termination supply vo ltage...............................1.5v 3.3v tap ac output load equivalent 2.5v tap ac test conditions input pulse levels................................................. v ss to 2.5v input rise and fall time .....................................................1 ns input timing reference levels... ...................................... 1.25v output reference levels .......... ...................................... 1.25v test load termination supply voltage ............................ 1.25v 2.5v tap ac output load equivalent note: 11.all voltages referenced to v ss (gnd). t do 1.5v 20p f z = 50 ? o 50 ? t do 1.25v 20p f z = 50 ? o 50 ? tap dc electrical characteristics and operating conditions (0c < ta < +70c; vdd = 3.3v 0.165v unless otherwise noted) [11] parameter description test conditions min. max. unit v oh1 output high voltage i oh = ?4.0 ma, v ddq = 3.3v 2.4 v i oh = ?1.0 ma, v ddq = 2.5v 2.0 v v oh2 output high voltage i oh = ?100 a v ddq = 3.3v 2.9 v v ddq = 2.5v 2.1 v v ol1 output low voltage i ol = 8.0 ma, v ddq = 3.3v 0.4 v i ol = 8.0 ma, v ddq = 2.5v 0.4 v v ol2 output low voltage i ol = 100 a v ddq = 3.3v 0.2 v v ddq = 2.5v 0.2 v v ih input high voltage v ddq = 3.3v 2.0 v dd + 0.3 v v ddq = 2.5v 1.7 v dd + 0.3 v v il input low voltage v ddq = 3.3v ?0.5 0.7 v v ddq = 2.5v ?0.3 0.7 v i x input load current gnd < v in < v ddq ?5 5 a [+] feedback
cy7c1370d cy7c1372d document #: 38-05555 rev. *f page 15 of 28 identification register definitions instruction field cy7c1372d cy7c1370d description revision number (31:29) 000 000 reserved for version number. cypress device id (28:12) [12] 01011001000100101 01011001000010101 reserved for future use. cypress jedec id (11:1) 00000110100 00000110100 allows unique identification of sram vendor. id register presence (0) 1 1 indicate the presence of an id register. scan register sizes register name bit size (x18) bit size (x36) instruction 3 3 bypass 1 1 id 32 32 boundary scan order (119-ball bga package) 85 85 boundary scan order (165-ball fbga package) 89 89 identification codes instruction code description extest 000 captures i/o ring contents. places the boundary scan register between tdi and tdo. forces all sram outputs to high-z state. idcode 001 loads the id register with the vendor id code and places the register between tdi and tdo. this operation does not affect sram operations. sample z 010 captures i/o ring contents. places the boundary scan register between tdi and tdo. forces all sram output drivers to a high-z state. reserved 011 do not use: this instru ction is reserved for future use. sample/preload 100 captures i/o ring contents. plac es the boundary scan register between tdi and tdo. does not affect sram operation. reserved 101 do not use: this instru ction is reserved for future use. reserved 110 do not use: this instru ction is reserved for future use. bypass 111 places the bypass register between tdi and td o. this operation does not affect sram opera- tions. note: 12. bit #24 is ?1? in the register definitions for both 2.5vand 3.3v versions of this device. [+] feedback
cy7c1370d cy7c1372d document #: 38-05555 rev. *f page 16 of 28 119-ball bga boundary scan order [13, 14] bit # ball id bit # ball id bit # ball id bit # ball id 1 h4 23 f6 45 g4 67 l1 2t4 24e7 46a4 68m2 3t5 25d7 47g3 69n1 4t6 26h7 48c3 70p1 5r5 27g6 49b2 71k1 6l5 28e6 50b3 72l2 7r6 29d6 51a3 73 n2 8u6 30c7 52c2 74p2 9r7 31b7 53a2 75r3 10 t7 32 c6 54 b1 76 t1 11 p6 33 a6 55 c1 77 r1 12 n7 34 c5 56 d2 78 t2 13 m6 35 b5 57 e1 79 l3 14 l7 36 g5 58 f2 80 r2 15 k6 37 b6 59 g1 81 t3 16 p7 38 d4 60 h2 82 l4 17 n6 39 b4 61 d1 83 n4 18 l6 40 f4 62 e2 84 p4 19 k7 41 m4 63 g2 85 internal 20 j5 42 a5 64 h1 21 h6 43 k4 65 j3 22 g7 44 e4 66 2k notes: 13. balls which are nc (no connect) are pre-set low. 14. bit# 85 is pre-set high. [+] feedback
cy7c1370d cy7c1372d document #: 38-05555 rev. *f page 17 of 28 165-ball bga boundary scan order [13, 15] bit # ball id bit # ball id bit # ball id 1n6 31d10 61g1 2n7 32c11 62d2 3n10 33a11 63 e2 4p11 34b11 64 f2 5p8 35a10 65g2 6r8 36b10 66h1 7r9 37a9 67h3 8p9 38b9 68 j1 9p10 39c10 69 k1 10 r10 40 a8 70 l1 11 r11 41 b8 71 m1 12 h11 42 a7 72 j2 13 n11 43 b7 73 k2 14 m11 44 b6 74 l2 15 l11 45 a6 75 m2 16 k11 46 b5 76 n1 17 j11 47 a5 77 n2 18 m10 48 a4 78 p1 19 l10 49 b4 79 r1 20 k10 50 b3 80 r2 21 j10 51 a3 81 p3 22 h9 52 a2 82 r3 23 h10 53 b2 83 p2 24 g11 54 c2 84 r4 25 f11 55 b1 85 p4 26 e11 56 a1 86 n5 27 d11 57 c1 87 p6 28 g10 58 d1 88 r6 29 f10 59 e1 89 internal 30 e10 60 f1 note: 15. bit# 89 is pre-set high. [+] feedback
cy7c1370d cy7c1372d document #: 38-05555 rev. *f page 18 of 28 maximum ratings (above which the useful life may be impaired. for user guide- lines, not tested.) storage temperature ............. .............. ...... ?65c to +150c ambient temperature with power applied........... .............. .............. ...... ?55c to +125c supply voltage on v dd relative to gnd........ ?0.5v to +4.6v supply voltage on v ddq relative to gnd ...... ?0.5v to +v dd dc to outputs in tri-state ................... ?0.5v to v ddq + 0.5v dc input voltage....................................?0.5v to v dd + 0.5v current into outputs (low).... ..................................... 20 ma static discharge voltage......... ........... ............ .......... > 2001v (per mil-std-883, method 3015) latch-up current.................................................... > 200 ma operating range range ambient temperature v dd v ddq commercial 0c to +70c 3.3v?5%/+10% 2.5v ?5% to v dd industrial ?40c to +85c electrical characteristics over the operating range [16, 17] parameter description test conditions min. max. unit v dd power supply voltage 3.135 3.6 v v ddq i/o supply voltage for 3.3v i/o 3.135 v dd v for 2.5v i/o 2.375 2.625 v v oh output high voltage for 3.3v i/o, i oh = ?4.0 ma 2.4 v for 2.5v i/o, i oh = ?1.0 ma 2.0 v v ol output low voltage for 3.3v i/o, i ol = 8.0 ma 0.4 v for 2.5v i/o, i ol = 1.0 ma 0.4 v v ih input high voltage [16] for 3.3v i/o 2.0 v dd + 0.3v v for 2.5v i/o 1.7 v dd + 0.3v v v il input low voltage [16] for 3.3v i/o ?0.3 0.8 v for 2.5v i/o ?0.3 0.7 v i x input leakage current except zz and mode gnd v i v ddq ?5 5 a input current of mode input = v ss ?30 a input = v dd 5 a input current of zz input = v ss ?5 a input = v dd 30 a i oz output leakage current gnd v i v ddq, output disabled ?5 5 a i dd v dd operating supply v dd = max., i out = 0 ma, f = f max = 1/t cyc 4-ns cycle, 250 mhz 350 ma 5-ns cycle, 200 mhz 300 ma 6-ns cycle, 167 mhz 275 ma i sb1 automatic ce power-down current?ttl inputs max. v dd , device deselected, v in v ih or v in v il , f = f max = 1/t cyc 4-ns cycle, 250 mhz 160 ma 5-ns cycle, 200 mhz 150 ma 6-ns cycle, 167 mhz 140 ma i sb2 automatic ce power-down current?cmos inputs max. v dd , device deselected, v in 0.3v or v in > v ddq ? 0.3v, f = 0 all speed grades 70 ma i sb3 automatic ce power-down current?cmos inputs max. v dd , device deselected, v in 0.3v or v in > v ddq ? 0.3v, f = f max = 1/t cyc 4-ns cycle, 250 mhz 135 ma 5-ns cycle, 200 mhz 130 ma 6-ns cycle, 167 mhz 125 ma i sb4 automatic ce power-down current?ttl inputs max. v dd , device deselected, v in v ih or v in v il , f = 0 all speed grades 80 ma notes: 16. overshoot: v ih (ac) < v dd +1.5v (pulse width less than t cyc /2), undershoot: v il (ac)> ?2v (pulse width less than t cyc /2). 17. t power-up : assumes a linear ramp from 0v to v dd (min.) within 200 ms. during this time v ih < v dd and v ddq < v dd . [+] feedback
cy7c1370d cy7c1372d document #: 38-05555 rev. *f page 19 of 28 note: 18. tested initially and after any design or proc ess change that may affect these parameters. capacitance [18] parameter description test conditions 100 tqfp max. 119 bga max. 165 fbga max. unit c in input capacitance t a = 25 c, f = 1 mhz, v dd = 3.3v. v ddq = 2.5v 589pf c clk clock input capacitance 5 8 9 pf c i/o input/output capacitance 5 8 9 pf thermal resistance [18] parameter description test conditions 100 tqfp package 119 bga package 165 fbga package unit ja thermal resistance (junction to ambient) test conditions follow standard test methods and procedures for measuring thermal impedance, per eia/jesd51. 28.66 23.8 20.7 c/w jc thermal resistance (junction to case) 4.08 6.2 4.0 c/w output r = 317 ? r = 351 ? 5pf including jig and scope (a) (b) output r l = 50 ? z 0 = 50 ? v t = 1.5v 3.3v all input pulses v ddq gnd 90% 10% 90% 10% 1 ns 1 ns (c) output r = 1667 ? r = 1538 ? 5pf including jig and scope (a) (b) output r l = 50 ? z 0 = 50 ? v t = 1.25v 2.5v all input pulses v ddq gnd 90% 10% 90% 10% 1 ns 1 ns (c) 3.3v i/o test load 2.5v i/o test load ac test loads and waveforms [+] feedback
cy7c1370d cy7c1372d document #: 38-05555 rev. *f page 20 of 28 switching characteristics over the operating range [23, 24] parameter description ?250 ?200 ?167 unit min. max. min. max. min. max. t power [19] v cc (typical) to the first access read or write 1 1 1 ms clock t cyc clock cycle time 4.0 5 6 ns f max maximum operating frequency 250 200 167 mhz t ch clock high 1.7 2.0 2.2 ns t cl clock low 1.7 2.0 2.2 ns output times t co data output valid after clk rise 2.6 3.0 3.4 ns t eov oe low to output valid 2.6 3.0 3.4 ns t doh data output hold after clk rise 1.0 1.3 1.3 ns t chz clock to high-z [20, 21, 22] 2.6 3.0 3.4 ns t clz clock to low-z [20, 21, 22] 1.0 1.3 1.3 ns t eohz oe high to output high-z [20, 21, 22] 2.6 3.0 3.4 ns t eolz oe low to output low-z [20, 21, 22] 000ns set-up times t as address set-up before clk rise 1.2 1.4 1.5 ns t ds data input set-up before clk rise 1.2 1.4 1.5 ns t cens cen set-up before clk rise 1.2 1.4 1.5 ns t wes we , bw x set-up before clk rise 1.2 1.4 1.5 ns t als adv/ld set-up before clk rise 1.2 1.4 1.5 ns t ces chip select set-up 1.2 1.4 1.5 ns hold times t ah address hold after clk rise 0.3 0.4 0.5 ns t dh data input hold after clk rise 0.3 0.4 0.5 ns t cenh cen hold after clk rise 0.3 0.4 0.5 ns t weh we , bw x hold after clk rise 0.3 0.4 0.5 ns t alh adv/ld hold after clk rise 0.3 0.4 0.5 ns t ceh chip select hold after clk rise 0.3 0.4 0.5 ns notes: 19. this part has a voltage regulator internally; t power is the time power needs to be supplied above v dd minimum initially, before a read or write operation can be initiated. 20. t chz , t clz , t eolz , and t eohz are specified with ac test conditions shown in (b) of ac test loads. transition is measured 200 mv from steady-state voltage . 21. at any given voltage and temperature, t eohz is less than t eolz and t chz is less than t clz to eliminate bus contention between srams when sharing the same data bus. these specifications do not impl y a bus contention condition, but reflect pa rameters guaranteed over worst case user conditions. device is designed to achieve high-z prior to low-z under the same system conditions. 22. this parameter is sampled and not 100% tested. 23. timing reference is 1.5v when v ddq = 3.3v and is 1.25v when v ddq = 2.5v. 24. test conditions shown in (a) of ac test loads unless otherwise noted. [+] feedback
cy7c1370d cy7c1372d document #: 38-05555 rev. *f page 21 of 28 switching waveforms read/write/timing [25, 26, 27] notes: 25. for this waveform zz is tied low. 26. when ce is low, ce 1 is low, ce 2 is high and ce 3 is low. when ce is high,ce 1 is high or ce 2 is low or ce 3 is high. 27. order of the burst sequence is determined by the status of the mode (0 = linear, 1 = interleaved).burst operations are optio nal. write d(a1) 123 456789 clk t cyc t cl t ch 10 ce t ceh t ces we cen t cenh t cens bw x adv/ld t ah t as address a1 a2 a3 a4 a5 a6 a7 t dh t ds data i n-out (dq) t clz d(a1) d(a2) d(a5) q(a4) q(a3) d(a2+1) t doh t chz t co write d(a2) burst write d(a2+1) read q(a3) read q(a4) burst read q(a4+1) write d(a5) read q(a6) write d(a7) deselect oe t oev t oelz t oehz t doh don?t care undefined q(a6) q(a4+1) [+] feedback
cy7c1370d cy7c1372d document #: 38-05555 rev. *f page 22 of 28 notes: 28. the ignore clock edge or stall cycle (clock 3) illustrated cen being used to create a pause. a write is not performed during this cycle. 29. device must be deselected when entering zz mode. see cycle descr iption table for all possible signal conditions to deselect the device. 30. i/os are in high-z when exiting zz sleep mode. nop,stall and deselect cycles [25, 26, 28] zz mode timing [29, 30] switching waveforms (continued) read q(a3) 456 78910 clk ce we cen bwx adv/ld address a3 a4 a5 d(a4) data in-out (dq) a1 q(a5) write d(a4) stall write d(a1) 123 read q(a2) stall nop read q(a5) deselect continue deselect don?t care undefined t chz a2 d(a1) q(a2) q(a3) t zz i supply clk zz t zzrec a ll inputs (except zz) don?t care i ddzz t zzi t rzzi outputs (q) high-z deselect or read only [+] feedback
cy7c1370d cy7c1372d document #: 38-05555 rev. *f page 23 of 28 ordering information not all of the speed, package and temperature ranges are available. please contact your local sales representative or visit www.cypress.com for actual products offered. speed (mhz) ordering code package diagram part and package type operating range 167 cy7c1370d-167axc 51-85050 100-pin thin quad flat pack (14 x 20 x 1.4 mm) lead-free commercial cy7c1372d-167axc cy7c1370d-167bgc 51-85115 119-ball ball grid array (14 x 22 x 2.4 mm) cy7c1372d-167bgc cy7c1370d-167bgxc 51-85115 119-ball ball grid array (14 x 22 x 2.4 mm) lead-free cy7c1372d-167bgxc cy7c1370d-167bzc 51-85180 165-ball fine-pitch ball grid array (13 x 15 x 1.4 mm) cy7c1372d-167bzc cy7c1370d-167bzxc 51-85180 165-ball fine-pitch ba ll grid array (13 x 15 x 1.4 mm) lead-free cy7c1372d-167bzxc cy7c1370d-167axi 51-85050 100-pin thin quad flat pack (14 x 20 x 1.4 mm) lead-free industrial cy7c1372d-167axi cy7c1370d-167bgi 51-85115 119-ball ball grid array (14 x 22 x 2.4 mm) cy7c1372d-167bgi cy7c1370d-167bgxi 51-85115 119-ball ball grid array (14 x 22 x 2.4 mm) lead-free cy7c1372d-167bgxi cy7c1370d-167bzi 51-85180 165-ball fine-pitch ball grid array (13 x 15 x 1.4 mm) cy7c1372d-167bzi cy7c1370d-167bzxi 51-85180 165-ball fine-pitch ba ll grid array (13 x 15 x 1.4 mm) lead-free cy7c1372d-167bzxi 200 cy7c1370d-200axc 51-85050 100-pin thin quad flat pack (14 x 20 x 1.4 mm) lead-free commercial cy7c1372d-200axc cy7c1370d-200bgc 51-85115 119-ball ball grid array (14 x 22 x 2.4 mm) cy7c1372d-200bgc cy7c1370d-200bgxc 51-85115 119-ball ball grid array (14 x 22 x 2.4 mm) lead-free cy7c1372d-200bgxc cy7c1370d-200bzc 51-85180 165-ball fine-pitch ball grid array (13 x 15 x 1.4 mm) cy7c1372d-200bzc cy7c1370d-200bzxc 51-85180 165-ball fine-pitch ba ll grid array (13 x 15 x 1.4 mm) lead-free cy7c1372d-200bzxc cy7c1370d-200axi 51-85050 100-pin thin quad flat pack (14 x 20 x 1.4 mm) lead-free industrial cy7c1372d-200axi cy7c1370d-200bgi 51-85115 119-ball ball grid array (14 x 22 x 2.4 mm) cy7c1372d-200bgi cy7c1370d-200bgxi 51-85115 119-ball ball grid array (14 x 22 x 2.4 mm) lead-free cy7c1372d-200bgxi cy7c1370d-200bzi 51-85180 165-ball fine-pitch ball grid array (13 x 15 x 1.4 mm) cy7c1372d-200bzi cy7c1370d-200bzxi 51-85180 165-ball fine-pitch ba ll grid array (13 x 15 x 1.4 mm) lead-free cy7c1372d-200bzxi [+] feedback
cy7c1370d cy7c1372d document #: 38-05555 rev. *f page 24 of 28 250 cy7c1370d-250axc 51-85050 100-pin thin quad flat pack (14 x 20 x 1.4 mm) lead-free commercial cy7c1372d-250axc cy7c1370d-250bgc 51-85115 119-ball ball grid array (14 x 22 x 2.4 mm) cy7c1372d-250bgc cy7c1370d-250bgxc 51-85115 119-ball ball grid array (14 x 22 x 2.4 mm) lead-free CY7C1372D-250BGXC cy7c1370d-250bzc 51-85180 165-ball fine-pitch ball grid array (13 x 15 x 1.4 mm) cy7c1372d-250bzc cy7c1370d-250bzxc 51-85180 165-ball fine-pitch ba ll grid array (13 x 15 x 1.4 mm) lead-free cy7c1372d-250bzxc cy7c1370d-250axi 51-85050 100-pin thin quad flat pack (14 x 20 x 1.4 mm) lead-free industrial cy7c1372d-250axi cy7c1370d-250bgi 51-85115 119-ball ball grid array (14 x 22 x 2.4 mm) cy7c1372d-250bgi cy7c1370d-250bgxi 51-85115 119-ball ball grid array (14 x 22 x 2.4 mm) lead-free cy7c1372d-250bgxi cy7c1370d-250bzi 51-85180 165-ball fine-pitch ball grid array (13 x 15 x 1.4 mm) cy7c1372d-250bzi cy7c1370d-250bzxi 51-85180 165-ball fine-pitch ba ll grid array (13 x 15 x 1.4 mm) lead-free cy7c1372d-250bzxi ordering information (continued) not all of the speed, package and temperature ranges are available. please contact your local sales representative or visit www.cypress.com for actual products offered. [+] feedback
cy7c1370d cy7c1372d document #: 38-05555 rev. *f page 25 of 28 package diagrams note: 1. jedec std ref ms-026 2. body length dimension does not include mold protrusion/end flash mold protrusion/end flash shall not exceed 0.0098 in (0.25 mm) per side 3. dimensions in millimeters body length dimensions are max plastic body size including mold mismatch 0.300.08 0.65 20.000.10 22.000.20 1.400.05 121 1.60 max. 0.05 min. 0.600.15 0 min. 0.25 0-7 (8x) stand-off r 0.08 min. typ. 0.20 max. 0.15 max. 0.20 max. r 0.08 min. 0.20 max. 14.000.10 16.000.20 0.10 see detail a detail a 1 100 30 31 50 51 80 81 gauge plane 1.00 ref. 0.20 min. seating plane 100-pin thin plastic quad flat pack (14 x 20 x 1.4 mm) (51-85050) 51-85050-*b [+] feedback
cy7c1370d cy7c1372d document #: 38-05555 rev. *f page 26 of 28 package diagrams (continued) 1.27 20.32 2 16 5 4 37 l e a b d c h g f k j u p n m t r 12.00 19.50 30 typ. 2.40 max. a1 corner 0.70 ref. u t r p n m l k j h g f e d c a b 21 43 65 7 ?1.00(3x) ref. 7.62 22.000.20 14.000.20 1.27 0.600.10 c 0.15 c b a 0.15(4x) ?0.05 m c ?0.750.15(119x) ?0.25mcab seating plane 0.900.05 3.81 10.16 0.25 c 0.56 51-85115-*b 119-ball bga (14 x 22 x 2.4 mm) (51-85115) [+] feedback
cy7c1370d cy7c1372d document #: 38-05555 rev. *f page 27 of 28 ? cypress semiconductor corporation, 2006. the information contained herein is subject to change without notice. cypress semic onductor corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a cypress product. nor does it convey or imply any license under patent or ot her rights. cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agr eement with cypress. furthermore, cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to re sult in significant injury to the user. the inclusion of cypress products in life-support systems application implies that the manu facturer assumes all risk of such use and in doing so indemni fies cypress against all charges. zbt is a trademark of integrated device technology, inc. no bl and no bus latency are trademarks of cypress semiconductor corporation. all products and company names mentioned in this document may be the trademarks of their respective holders. package diagrams (continued) a 1 pin 1 corner 15.000.10 13.000.10 7.00 1.00 ?0.50 (165x) ?0.25mcab ?0.05 m c b a 0.15(4x) 0.350.06 seating plane 0.530.05 0.25 c 0.15 c pin1corner top view bottom view 2 3 4 5 6 7 8 9 10 10.00 14.00 b c d e f g h j k l m n 11 11 10 9 8 67 5 4 3 2 1 p r p r k m n l j h g f e d c b a a 15.000.10 13.000.10 b c 1.00 5.00 0.36 -0.06 +0.14 1.40 max. solder pad type : non-solder mask defined (nsmd) notes : package weight : 0.475g jedec reference : mo-216 / design 4.6c package code : bb0ac 51-85180-*a 165 fbga 13 x 15 x 1.40 mm bb165d/bw165d a 1 pin 1 corner 15.000.10 13.000.10 7.00 1.00 ?0.50 (165x) ?0.25 m c a b ?0.05 m c b a 0.15(4x) 0.350.06 seating plane 0.530.05 0.25 c 0.15 c pin 1 corner top view bottom view 2 3 4 5 6 7 8 9 10 10.00 14.00 b c d e f g h j k l m n 11 11 10 9 8 67 5 4 3 2 1 p r p r k m n l j h g f e d c b a a 15.000.10 13.000.10 b c 1.00 5.00 0.36 - 0.06 +0.14 1.40 max. solder pad type : non-solder mask defined (nsmd) notes : package weight : 0.475g jedec reference : mo-216 / design 4.6c package code : bb0ac 51-85180-*a 165-ball fbga (13 x 15 x 1.4 mm) (51-85180) [+] feedback
cy7c1370d cy7c1372d document #: 38-05555 rev. *f page 28 of 28 document history page document title: cy7c1372d/cy7c1370d 18-mbit (512k x 36/1m x 18) pipelined sram with nobl? architecture document number: 38-05555 rev. ecn no. issue date orig. of change description of change ** 254509 see ecn rkf new data sheet *a 276690 see ecn vbl changed tqfp pkg to lead-fr ee tqfp in ordering information section added comment of lead-free bg and bz packages availability *b 288531 see ecn syt edited description under ?i eee 1149.1 serial boundary scan (jtag)? for non-compliance with 1149.1 added lead-free information for 100-pin tqfp, 119 bga and 165 fbga packages *c 326078 see ecn pci address expansion pins/balls in the pinouts for all packages are modified as per jedec standard added description on extest output bus tri-state changed description on the tap instruction set overview and extest changed ja and jc for tqfp package from 31 and 6 c/w to 28.66 and 4.08 c/w respectively changed ja and jc for bga package from 45 and 7 c/w to 23.8 and 6.2 c/w respectively changed ja and jc for fbga package from 46 and 3 c/w to 20.7 and 4.0 c/w respectively modified v ol, v oh test conditions removed shading from ac/dc table and selection guide removed comment of ?lead-free bg packages availability? below the ordering information updated ordering information table changed from preliminary to final *d 370734 see ecn pci modified test condition in note# 17 from v ddq < v dd to v ddq v dd *e 416321 see ecn nxr converted from preliminary to final changed address of cypress semiconductor corporation on page# 1 from ?3901 north first street? to ?198 champion court? modified ?input load? to ?input leakage current except zz and mode? in the electrical characteristics table changed three-state to tri-state changed the i x current values of mode on page # 18 from ?5 a and 30 a to ?30 a and 5 a changed the i x current values of zz on page # 18 from ?30 a and 5 a to ?5 a and 30 a changed v ih < v dd to v ih < v dd on page # 18 replaced package name column with package diagram in the ordering information table updated ordering information table *f 475677 see ecn vkn added the maximum rating for supply voltage on v ddq relative to gnd changed t th , t tl from 25 ns to 20 ns and t tdov from 5 ns to 10 ns in tap ac switching characteristics table. updated the ordering information table. [+] feedback

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